NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet - Page 2

• Manufacturer Part Number: NX3008NBKS,115
• Description: MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 990 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Marking
Table 4.
[1]
NX3008NBKS
Product data sheet
Pin
1
2
3
4
5
6
Type number
NX3008NBKS
Type number
NX3008NBKS
% = placeholder for manufacturing site code.
Symbol Description
S1
G1
D2
S2
G2
D1
Pinning information
Ordering information
Marking codes
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
Package
Name
SC-88
Description
plastic surface-mounted package; 6 leads
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
Simplified outline
SOT363 (SC-88)
Marking code
LB%
1
6
5
2
30 V, 350 mA dual N-channel Trench MOSFET
3
4
[1]
Graphic symbol
G1
NX3008NBKS
D1
S1
© NXP B.V. 2011. All rights reserved.
D2
S2
SOT363
Version
017aaa256
2 of 17
G2