NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet - Page 14
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NX3008NBKS,115
Manufacturer Part Number
NX3008NBKS,115
Description
MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.NX3008NBKS115.pdf
(17 pages)
Specifications of NX3008NBKS,115
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
350 mA
Resistance Drain-source Rds (on)
1.4 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Minimum Operating Temperature
- 55 C
Power Dissipation
990 mW
Factory Pack Quantity
3000
NXP Semiconductors
11. Revision history
Table 8.
NX3008NBKS
Product data sheet
Document ID
NX3008NBKS v.1
Revision history
Release date
20110801
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 1 — 1 August 2011
30 V, 350 mA dual N-channel Trench MOSFET
Change notice
-
NX3008NBKS
Supersedes
-
© NXP B.V. 2011. All rights reserved.
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