NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet - Page 14

• Manufacturer Part Number: NX3008NBKS,115
• Description: MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 990 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
11. Revision history
Table 8.
NX3008NBKS
Product data sheet
Document ID
NX3008NBKS v.1
Revision history
Release date
20110801
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 1 — 1 August 2011
30 V, 350 mA dual N-channel Trench MOSFET
Change notice
-
NX3008NBKS
Supersedes
-
© NXP B.V. 2011. All rights reserved.
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