PMF170XP,115 NXP Semiconductors, PMF170XP,115 Datasheet - Page 3

• Manufacturer Part Number: PMF170XP,115
• Description: MOSFET P-CH -20 V -1 A
• Manufacturer: NXP Semiconductors

Specifications of PMF170XP,115

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 1 A
• Resistance Drain-source Rds (on): 200 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Forward Transconductance Gfs (max / Min): 1.9 S
• Gate Charge Qg: 3.9 nC
• Power Dissipation: 290 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
PMF170XP
Product data sheet
Fig 1.
Fig 3.
P
(%)
–10
–10
(A)
I
der
D
120
–10
80
40
–1
-1
-2
–10
0
−75
function of junction temperature
voltage
Normalized total power dissipation as a
I
(1) t
(2) t
(3) DC; T
(4) t
(5) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
-1
= single pulse
p
p
p
= 1 ms
= 10 ms
= 100 ms
−25
sp
amb
= 25 °C
= 25 °C; drain mounting pad 6 cm
Limit R
25
DSon
75
= V
DS
/I
D
125
All information provided in this document is subject to legal disclaimers.
017aaa123
–1
T
j
(°C)
Rev. 1 — 2 September 2011
175
2
Fig 2.
(%)
I
der
120
80
40
0
−75
function of junction temperature
Normalized continuous drain current as a
–10
−25
20 V, 1 A P-channel Trench MOSFET
25
(1)
(2)
(3)
(4)
(5)
V
DS
75
(V)
PMF170XP
125
© NXP B.V. 2011. All rights reserved.
017aaa124
017aaa300
T
j
(°C)
–10
175
2
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