PMF170XP,115 NXP Semiconductors, PMF170XP,115 Datasheet

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PMF170XP,115

Manufacturer Part Number
PMF170XP,115
Description
MOSFET P-CH -20 V -1 A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMF170XP,115

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 1 A
Resistance Drain-source Rds (on)
200 mOhms
Mounting Style
SMD/SMT
Package / Case
SOT-323
Forward Transconductance Gfs (max / Min)
1.9 S
Gate Charge Qg
3.9 nC
Power Dissipation
290 mW
Factory Pack Quantity
3000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMF170XP,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
Table 1.
[1]
2. Pinning information
Table 2.
Symbol
V
V
I
Static characteristics
R
Pin
1
2
3
D
DS
GS
DSon
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Symbol Description
G
S
D
Quick reference data
Pinning information
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
gate
source
drain
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMF170XP
20 V, 1 A P-channel Trench MOSFET
Rev. 1 — 2 September 2011
Low R
Very fast switching
Relay driver
High-speed line driver
DSon
Conditions
T
V
V
j
GS
GS
= 25 °C
= -4.5 V; T
= -4.5 V; I
Simplified outline
D
amb
= -1 A; T
SOT323 (SC-70)
1
25 °C
j
= 25 °C
3
2
Trench MOSFET technology
High-side loadswitch
Switching circuits
[1]
Graphic symbol
Min
-
-12
-
-
G
Product data sheet
Typ
-
-
-
175
017aaa094
D
S
2
Max
-20
12
-1
200
.
Unit
V
V
A
mΩ

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PMF170XP,115 Summary of contents

Page 1

PMF170XP P-channel Trench MOSFET Rev. 1 — 2 September 2011 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ...

Page 2

... NXP Semiconductors 3. Ordering information Table 3. Ordering information Type number Package Name PMF170XP SC-70 4. Marking Table 4. Marking codes Type number PMF170XP [ placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage ...

Page 3

... NXP Semiconductors 120 P der (%) −75 −25 25 Fig 1. Normalized total power dissipation as a function of junction temperature –10 Limit R I DSon D (A) –1 -1 –10 -2 –10 -1 – single pulse (3) DC ° 100 ms p (5) DC °C; drain mounting pad 6 cm amb Fig 3 ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance th(j-a) from junction to ambient R thermal resistance th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm ...

Page 5

... NXP Semiconductors 7. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GSth voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance g forward fs transconductance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge ...

Page 6

... NXP Semiconductors –4 –4 –3 (A) –3.0 V –3 –2.5 V –2.0 V –2 –1.8 V –1 –1 –1 – °C j Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 500 R DSon (mΩ) 400 300 200 100 0 –2.0 –2.5 – ...

Page 7

... NXP Semiconductors – (A) –3 –2 –1 ( –1 V > I × DSon ( ° 150 °C j Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values −1.6 V GS(th) (V) (1) −1.2 (2) −0.8 (3) −0.4 0.0 − -0.25 mA (1) maximum values ...

Page 8

... NXP Semiconductors – (V) –4 –3 –2 – -1 - Fig 14. Gate-source voltage as a function of gate charge; typical values ( 150 ° °C j Fig 16. Source current as a function of source-drain voltage; typical values PMF170XP Product data sheet ...

Page 9

... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition PMF170XP Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved. ...

Page 10

... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 Fig 18. Package outline SOT323 (SC-70) PMF170XP Product data sheet scale ...

Page 11

... NXP Semiconductors 10. Soldering 0.6 2.35 (3×) Fig 19. Reflow soldering footprint for SOT323 (SC-70) 1.425 (3×) 3.65 2.1 Fig 20. Wave soldering footprint for SOT323 (SC-70) PMF170XP Product data sheet 2.65 1.85 1.325 2 3 1.3 0.5 1 (3×) 0.55 (3×) 4.6 2.575 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP ...

Page 12

... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMF170XP v.1 20110902 PMF170XP Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET ...

Page 13

... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...

Page 14

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 15

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 12 Legal information ...

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