SI8805EDB-T2-E1 Vishay/Siliconix, SI8805EDB-T2-E1 Datasheet - Page 5

• Manufacturer Part Number: SI8805EDB-T2-E1
• Description: MOSFET 8V P-CH Micro Foot
• Manufacturer: Vishay/Siliconix

Specifications of SI8805EDB-T2-E1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: - 3.1 A
• Resistance Drain-source Rds (on): 0.056 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: Micro Foot-4
• Forward Transconductance Gfs (max / Min): 8 S
• Gate Charge Qg: 6.7 nC
• Power Dissipation: 0.9 W

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67935
S12-1620-Rev. B, 09-Jul-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3
2
1
0
0
25
T
A
- Ambient Temperature (°C)
Current Derating*
50
D
is based on T
75
For technical questions, contact:
100
J(max)
0.01
100
0.1
10
1
0.1
125
= 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
Safe Operating Area, Junction-to-Ambient
This document is subject to change without notice.
Limited by R
* V
T
A
GS
= 25 °C
> minimum V
150
V
DS
BVDSS Limited
DS(on)
- Drain-to-Source Voltage (V)
New Product
1
*
GS
at which R
[e-mail]
DS(on)
10
100 µs
1 ms
10 ms
10 s, 1s, 100ms
DC
is specified
0.8
0.6
0.4
0.2
0
25
100
50
T
A
- Ambient Temperature (°C)
Power Derating
75
100
Vishay Siliconix
www.vishay.com/doc?91000
Si8805EDB
125
www.vishay.com
150
5