SI8805EDB-T2-E1 Vishay/Siliconix, SI8805EDB-T2-E1 Datasheet - Page 4

• Manufacturer Part Number: SI8805EDB-T2-E1
• Description: MOSFET 8V P-CH Micro Foot
• Manufacturer: Vishay/Siliconix

Specifications of SI8805EDB-T2-E1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: - 3.1 A
• Resistance Drain-source Rds (on): 0.056 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: Micro Foot-4
• Forward Transconductance Gfs (max / Min): 8 S
• Gate Charge Qg: 6.7 nC
• Power Dissipation: 0.9 W

Si8805EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.25
0.20
0.15
0.10
0.05
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0
5
4
3
2
1
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
I
D
D
= 0.3 A; T
= 1.5 A
- 25
V
1
GS
V
T
GS
2
V
0
= 4.5 V, I
J
J
Q
DS
V
= 25 °C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
g
GS
V
= 4 V
- Total Gate Charge (nC)
GS
= 2.5 V, I
Gate Charge
25
= 1.8 V, 1.5 V, I
2
I
D
D
= 1.5 A
= 1.5 A; T
I
50
D
4
V
D
V
DS
= 0.3 A; T
= 1.5 A
GS
= 2 V
I
= 1.2 V, I
D
3
75
V
= 1.5 A; T
For technical questions, contact:
J
DS
= 25 °C
D
= 0.5 A
= 6.4 V
J
= 125 °C
100
6
D
= 0.5 A
J
4
= 125 °C
This document is subject to change without notice.
125
150
8
5
New Product
[e-mail]
100
0.1
0.7
0.6
0.5
0.4
0.3
0.2
14
12
10
10
8
6
4
2
0
1
0.001
- 50
0.0
Single Pulse Power (Junction-to-Ambient)
Source-Drain Diode Forward Voltage
- 25
0.01
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.1
0.4
T
J
25
- Temperature (°C)
T
Time (s)
J
I
D
= 150 °C
0.6
50
= 250 μA
1
75
S12-1620-Rev. B, 09-Jul-12
0.8
10
T
Document Number: 67935
J
www.vishay.com/doc?91000
= 25 °C
100
100
1.0
125
1000
150
1.2