BSS316NH6327XT Infineon Technologies, BSS316NH6327XT Datasheet - Page 5
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BSS316NH6327XT
Manufacturer Part Number
BSS316NH6327XT
Description
MOSFET OptiMOS 2 Small Signal Transistor
Manufacturer
Infineon Technologies
Datasheet
1.BSS316NH6327XT.pdf
(9 pages)
Specifications of BSS316NH6327XT
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.4 A
Resistance Drain-source Rds (on)
160 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PG-SOT-23
Fall Time
1 ns
Gate Charge Qg
0.6 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
500 mW
Rise Time
2.3 ns
Typical Turn-off Delay Time
5.8 ns
Part # Aliases
BSS316N BSS316NH6327XTSA1 H6327
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS316NH6327XTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev 2.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
4
3
2
1
0
DS
GS
4
3
2
1
0
0
); T
0
); |V
10 V
j
=25 °C
GS
DS
0.5
|>2|I
4.5 V
1
D
|R
1
DS(on)max
2
V
V
150 °C
DS
GS
1.5
4 V
3.5 V
3.3 V
3 V
2.8 V
[V]
[V]
3
25 °C
2
4
2.5
page 5
5
3
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
400
350
300
250
200
150
100
50
D
=f(I
0
6
4
2
0
); T
0
0
3.5 V
D
j
); T
=25 °C
GS
j
=25 °C
1
2
4 V
I
I
D
D
4.5 V
2
4
[A]
[A]
5 V
7 V
10 V
3
6
BSS316N
2011-07-06
4
8