BSS316NH6327XT Infineon Technologies, BSS316NH6327XT Datasheet
BSS316NH6327XT
Specifications of BSS316NH6327XT
Available stocks
Related parts for BSS316NH6327XT
BSS316NH6327XT Summary of contents
Page 1
OptiMOS 2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package BSS316N SOT23 Maximum ratings, at ...
Page 2
Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance 1) 2 Performed on 40mm FR4 PCB. The traces are ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
Page 4
Power dissipation =f tot A 0.5 0.375 0.25 0.125 Safe operating area =f =25 ° parameter ...
Page 5
Typ. output characteristics =f =25 ° parameter 4 0 Typ. transfer characteristics =f |>2 ...
Page 6
Drain-source on-state resistance = DS(on 300 250 200 98 % 150 100 50 0 -60 - Typ. capacitances C =f ...
Page 7
Avalanche characteristics =25 Ω =f parameter: T j(start Drain-source breakdown voltage =f =250 µA V BR(DSS) ...
Page 8
Package Outline: Footprint: Dimensions in mm Rev 2.3 SOT23 Packaging: page 8 BSS316N 2011-07-06 ...
Page 9
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...