BZX100A T/R NXP Semiconductors, BZX100A T/R Datasheet - Page 5

• Manufacturer Part Number: BZX100A T/R
• Description: Zener Diodes GP ZENER DIODE
• Manufacturer: NXP Semiconductors

Specifications of BZX100A T/R

• Product Category: Zener Diodes
• Rohs: yes
• Zener Voltage: 100 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 138 mV/k
• Power Dissipation: 1 W
• Maximum Reverse Leakage Current: 0.2 uA
• Maximum Zener Impedance: 700 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-90
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BZX100A,115

NXP Semiconductors
8. Application information
BZX100A_1
Product data sheet
Fig 4. Temperature coefficient as a function of
(mV/K)
S
150
Z
140
130
120
110
100
T
working current; typical values
0
j
= 25 C to 150 C
1
High-voltage Zener diodes can be used as overvoltage protection diodes for Integrated
Circuits (IC) due to their ability to cut off the applied voltage at a well-defined value. One
important application is the protection of EL driver circuits where a driver IC is connected
to an EL foil. Since both the foil as well as the IC are sensitive against voltage overstress,
it is necessary to install an additional protection device in the circuit. Commonly, a
peak-to-peak voltage of 220 V should not be exceeded, such that two 100 V diodes in
back-to-back configuration are used.
2
Fig 6. Application diagram
3
4
006aab050
I
Z
(mA)
ENABLE
5
Rev. 01 — 30 May 2007
R enable
CHF
CLF
GND
CHF
CLF
n.c.
Fig 5. Working current as a function of working
E
1
2
3
4
5
(A)
I
10
10
10
10
10
10
10
Z
DRIVER IC
3
4
5
6
7
8
9
T
voltage; typical values
80
j
= 25 C
EL LAMP
10
9
8
7
6
90
V+
L+
VO
L
n.c.
100
L
006aab052
BZX100A
BZX100A
V
BAT
Single Zener diode
110
BZX100A
© NXP B.V. 2007. All rights reserved.
006aab051
V
Z
(V)
120
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