NVR1P02T1G ON Semiconductor, NVR1P02T1G Datasheet - Page 4

• Manufacturer Part Number: NVR1P02T1G
• Description: MOSFET AUTOMOTIVE MOSFET
• Manufacturer: ON Semiconductor

Specifications of NVR1P02T1G

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 1 A
• Resistance Drain-source Rds (on): 148 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 400 mW

100
10
300
250
200
150
100
1
50
0
1
10
V
I
V
Figure 9. Resistive Switching Time Variation
D
C
C
DD
GS
iss
rss
= −1 A
t
d(off)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
V
= −15 V
= −5 V
DS
5
t
f
−V
= 0 V
Figure 7. Capacitance Variation
GS
versus Gate Resistance
R
0
G
V
, GATE RESISTANCE (W)
−V
GS
VOLTAGE (VOLTS)
DS
= 0 V
5
10
10
t
r
C
C
C
15
oss
iss
rss
T
J
= 25°C
20
t
d(on)
http://onsemi.com
100
25
4
1.001
0.901
0.801
0.701
0.601
0.501
0.401
0.301
0.201
0.101
0.001
4.5
1.5
3
0
6
0
2.0E−01
Drain−to−Source Voltage versus Total Charge
V
Figure 10. Diode Forward Voltage versus
DS
V
T
V
J
GS
Q
3.0E−01
SD
= 25°C
Figure 8. Gate−to−Source and
1
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.5
Q
G
, TOTAL GATE CHARGE (nC)
4.0E−01
Current
Q
1
T
5.0E−01
V
Q
GS
2
1.5
6.0E−01
I
T
D
J
= −1 A
= 25°C
7.0E−01
2