NVR1P02T1G ON Semiconductor, NVR1P02T1G Datasheet - Page 3

• Manufacturer Part Number: NVR1P02T1G
• Description: MOSFET AUTOMOTIVE MOSFET
• Manufacturer: ON Semiconductor

Specifications of NVR1P02T1G

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 1 A
• Resistance Drain-source Rds (on): 148 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 400 mW

2.25
1.75
1.25
0.75
0.25
0.45
0.35
0.25
0.15
0.05
2.5
1.5
0.5
0.4
0.3
0.2
0.1
2.5
1.5
0.5
2
1
0
2
1
0
−45
0
0.1
Figure 3. On−Resistance versus Drain Current
−V
V
I
V
0.25
GS
−4.5 V
D
0.2
−20
GS
Figure 5. On−Resistance Variation with
DS
Figure 1. On−Region Characteristics
= −1.5 A
= −4.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −10 V
T
0.3
J
0.5
, JUNCTION TEMPERATURE (°C)
−I
5
−4 V
D
, DRAIN CURRENT (AMPS)
0.4
and Temperature
0.75
30
Temperature
0.5
1
55
0.6
1.25
80
V
0.7
GS
−3.5 V
−3 V
1.5
= −2.5 V
105
T
T
T
0.8
J
J
J
T
= 150°C
= −40°C
= 25°C
J
= 25°C
1.75
130
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0.9
155
2
1
3
0.225
0.175
0.125
0.075
0.275
1000
1.75
1.25
0.75
0.25
0.25
0.15
0.05
100
1.5
0.5
0.2
0.1
10
2
1
0
1
1
0.2
1
Figure 4. On−Resistance versus Drain Current
V
Figure 6. Drain−to−Source Leakage Current
V
V
GS
−V
GS
DS
−V
3
0.4
DS
= 0 V
GS
= −10 V
≥ −10 V
1.5
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
−I
D
0.6
, DRAIN CURRENT (AMPS)
7
2
and Temperature
versus Voltage
T
T
J
J
9
= 150°C
0.8
= 125°C
T
J
= 125°C
2.5
T
T
11
T
J
J
J
= 150°C
= −40°C
= 25°C
1
13
3
15
1.2
T
T
J
J
17
= −40°C
= 25°C
3.5
1.4
19
1.6
21
4