NVR1P02T1G ON Semiconductor, NVR1P02T1G Datasheet - Page 2

• Manufacturer Part Number: NVR1P02T1G
• Description: MOSFET AUTOMOTIVE MOSFET
• Manufacturer: ON Semiconductor

Specifications of NVR1P02T1G

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 1 A
• Resistance Drain-source Rds (on): 148 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 400 mW

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
BODY−DRAIN DIODE RATINGS (Note 1)
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Diode Forward On−Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(Positive Temperature Coefficient)
(V
(V
(V
(Negative Temperature Coefficient)
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
S
S
S
S
GS
DS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
DD
DS
DS
DS
= −0.6 A, V
= −0.6 A, V
= −1 A, dI
= −1 A, dI
= −20 V, V
= −20 V, V
= V
= −5 V, V
= −5 V, V
= −5 V, V
= −15 V, V
= −15 V, V
= −15 V, V
= 0 V, I
= −10 V, I
= −4.5 V, I
= −15 V, I
= −15 V, I
= −15 V, I
= −15 V, I
GS
, I
D
S
S
D
/dt = 100 A/ms, V
/dt = 100 A/ms, V
= −10 mA)
GS
GS
GS
GS
GS
D
D
D
D
D
= −250 mA)
D
GS
GS
GS
GS
GS
= −1.5 A)
= −1 A, V
= −1 A, V
= −1 A, V
= −1 A, V
= −0.75 A)
= 0 V, f = 1.0 MHz)
= 0 V, f = 1.0 MHz)
= 0 V, f = 1.0 MHz)
= 0 V)
= 0 V, T
= 0 V, T
= 0 V, T
= −5 V, I
= −5 V, I
= −5 V, I
J
GS
GS
GS
GS
J
J
= 150°C)
D
D
D
= 25°C)
= 150°C)
Characteristic
GS
= −0.8 A)
= −0.8 A)
= −0.8 A)
= −5 V, R
= −5 V, R
= −5 V, R
= −5 V, R
GS
GS
= ±20 V, V
= 0 V)
= 0 V)
(T
G
G
G
G
A
= 2.5 W)
= 2.5 W)
= 2.5 W)
= 2.5 W)
= 25°C unless otherwise noted)
DS
= 0 V)
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2
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
C
V
GS(th)
C
Q
Q
Q
d(on)
d(off)
DSS
GSS
t
t
t
oss
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
−1.1
Min
−20
0.148
0.235
0.008
−1.9
−4.0
0.75
−0.8
−0.6
13.5
10.5
Typ
165
110
7.0
9.0
9.0
3.0
2.5
1.0
3.0
32
35
0.180
0.280
±100
Max
−1.0
−2.3
−1.0
−10
mV/°C
mV/°C
Unit
nA
nC
mC
mA
pF
ns
ns
W
V
V
V