PSMN3R3-80ES,127 NXP Semiconductors, PSMN3R3-80ES,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN3R3-80ES,127
• Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 44 ns
• Gate Charge Qg: 135 nC
• Power Dissipation: 338 W
• Rise Time: 43 ns
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN3R3-80ES
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
(A)
I
10
10
D
10
240
200
160
120
10
80
40
-1
3
2
1
0
mounting base temperature
0.1
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(1)
100
Limit R
1
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aag824
DS
mb
/ I
( ° C)
D
200
Rev. 1 — 31 October 2011
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
t
100 μ s
1 ms
10 ms
100 ms
100
p
PSMN3R3-80ES
=10 μ s
100
V
DS
(V)
150
© NXP B.V. 2011. All rights reserved.
T
003aag823
mb
03aa16
(°C)
1000
200
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