BSS139H6327XT Infineon Technologies, BSS139H6327XT Datasheet - Page 5

• Manufacturer Part Number: BSS139H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS139H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 mA
• Resistance Drain-source Rds (on): 14 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 182 ns
• Gate Charge Qg: 2.3 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 5.4 ns
• Typical Turn-off Delay Time: 43 ns
• Part # Aliases: BSS139 BSS139H6327XTSA1 H6327

Rev. 1.
8
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.16
0.12
0.08
0.04
0.25
0.15
0.05
0.2
0.3
0.2
0.1
DS
GS
0
0
); T
-2
0
); |V
j
=25 °C
GS
DS
V 10
|>2|I
2
V 1
D
|R
-1
DS(on)max
4
V
V
DS
GS
[V]
[V]
6
0
-55 °C
8
V 0.1-
V 0.2-
V 0.5
V 0.1
150 °C
V 0
V 0.2
25 °C
page 5
10
1
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.25
0.15
0.05
0.2
0.1
30
20
10
D
0
=f(I
0
0.00
); T
0
D
j
); T
=25 °C
GS
j
=25 °C
-0.2 V
0.05
0.04
-0.1 V
0 V
0.1 V
I
I
0.10
D
0.08
D
[A]
[A]
0.2 V
0.15
0.12
0.5 V
BSS139
10 V
1 V
2009-08-18
0.20
0.16