BSS139H6327XT Infineon Technologies, BSS139H6327XT Datasheet - Page 3

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BSS139H6327XT

Manufacturer Part Number
BSS139H6327XT
Description
MOSFET SIPMOS Small Signal Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSS139H6327XT

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 mA
Resistance Drain-source Rds (on)
14 Ohms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PG-SOT-23
Fall Time
182 ns
Gate Charge Qg
2.3 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
360 mW
Rise Time
5.4 ns
Typical Turn-off Delay Time
43 ns
Part # Aliases
BSS139 BSS139H6327XTSA1 H6327
Rev. 1.
8
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
I
V
T
V
T
V
di
page 3
D
D
A
j
GS
DD
GS
DD
GS
GS
R
=0.04 A, R
=0.04 A,
=25 °C
F
=25 °C
=50 V, I
/dt =100 A/µs
=-3 V, V
=125 V,
=-3...5 V,
=200 V,
=-3 to 5 V
=-3 V, I
F
F
=0.04 A,
DS
=0.1 A,
G
=6 Ω
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.28
0.14
0.81
typ.
182
6.7
2.6
5.8
5.4
1.3
2.3
8.6
2.1
60
29
-
-
max.
0.21
0.10
12.9
273
8.4
3.3
8.7
8.1
2.0
3.5
0.4
1.2
3.1
76
43
-
BSS139
Unit
pF
ns
nC
V
A
V
ns
nC
2009-08-18

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