BSS131H6327XT Infineon Technologies, BSS131H6327XT Datasheet - Page 8

• Manufacturer Part Number: BSS131H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS131H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 mA
• Resistance Drain-source Rds (on): 14 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 64.5 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 3.1 ns
• Typical Turn-off Delay Time: 13.7 ns
• Part # Aliases: BSS131 BSS131H6327XTSA1 H6327

Rev. 2.6
Rev. 2.6
Package Outline:
Footprint:
Packaging:
page 8
page 8
BSS131
2012-03-29
2012-03-29