BSS131H6327XT Infineon Technologies, BSS131H6327XT Datasheet - Page 7

• Manufacturer Part Number: BSS131H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS131H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 mA
• Resistance Drain-source Rds (on): 14 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 64.5 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 3.1 ns
• Typical Turn-off Delay Time: 13.7 ns
• Part # Aliases: BSS131 BSS131H6327XTSA1 H6327

Rev. 2.6
Rev. 2.6
13 Typ. gate charge
V
parameter: V
GS
=f(Q
12
12
10
10
8
8
6
6
4
4
2
2
0
0
gate
0
0
); I
DD
D
=0.1 A pulsed
0.5
0.5
1
1
Q
Q
48 V
48 V
gate
gate
[nC]
[nC]
1.5
1.5
192 V
192 V
120V
120V
2
2
2.5
2.5
page 7
page 7
14 Drain-source breakdown voltage
V
BR(DSS)
300
300
290
290
280
280
270
270
260
260
250
250
240
240
230
230
220
220
210
210
200
200
=f(T
-60
-60
j
); I
D
-20
-20
=250 µA
20
20
T
T
j
j
[°C]
[°C]
60
60
100
100
2012-03-29
2012-03-29
BSS131
140
140