PSMN013-100BS,118 NXP Semiconductors, PSMN013-100BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN013-100BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 68 A
• Resistance Drain-source Rds (on): 13.9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN013-100BS
Product data sheet
Fig. 7.
Fig. 9.
R
(mΩ)
DS on
(A)
I
100
D
45
35
25
15
80
60
40
20
5
0
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
4
0
8
2
T
j
= 1 75 °C
1 2
4
16
V
All information provided in this document is subject to legal disclaimers.
V
003a a d585
003a a d582
25 °C
GS
GS
(V)
(V)
20
6
4 October 2012
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Fig. 8.
Fig. 10. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(S )
g
150
120
fs
90
60
30
5
4
3
2
1
0
- 60
0
Forward transconductance as a function of
drain current; typical values
junction temperature
0
30
0
60
60
PSMN013-100BS
max
min
typ
90
120
12 0
© NXP B.V. 2012. All rights reserved
003a a d586
003aad280
T
I
j
D
(°C)
(A)
150
180
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