PSMN013-100BS,118 NXP Semiconductors, PSMN013-100BS,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN013-100BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 68 A
• Resistance Drain-source Rds (on): 13.9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN013-100BS
Product data sheet
Symbol
Fig. 5.
C
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
SD
rss
r
(A)
I
D
200
160
120
Output characteristics: drain current as a
function of drain-source voltage; typical values
80
40
0
0
Parameter
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
1
2
20
Conditions
All information provided in this document is subject to legal disclaimers.
V
R
I
I
V
3
S
S
V
DS
DS
10
G(ext)
= 15 A; V
= 25 A; dI
GS
003a a d577
V
= 50 V; R
= 50 V
DS
(V) = 4
(V)
5.5
4.5
= 4.7 Ω; T
6
5
4
GS
S
4 October 2012
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
/dt = 100 A/µs; V
L
= 0 V; T
= 2 Ω; V
j
= 25 °C
Fig. 6.
j
GS
= 25 °C;
(pF)
5000
4000
3000
2000
1000
= 10 V;
C
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
GS
0
Fig. 17
= 0 V;
2
4
Min
-
-
-
-
-
-
-
-
PSMN013-100BS
6
Typ
136
20.7
25
52.5
24
0.85
52
109
© NXP B.V. 2012. All rights reserved
8
003a a d580
V
GS
C
C
Max
191
31.1
37.5
78.8
36
1.2
68
142
is s
rs s
(V)
10
Unit
pF
ns
ns
ns
ns
V
ns
nC
6 / 13