PSMN013-100BS,118 NXP Semiconductors, PSMN013-100BS,118 Datasheet - Page 13

• Manufacturer Part Number: PSMN013-100BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 68 A
• Resistance Drain-source Rds (on): 13.9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
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© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Date of release: 4 October 2012
PSMN013-100BS
Product data sheet
Product profile ....................................................... 1
Pinning information ............................................... 2
Ordering information ............................................. 2
Marking ................................................................... 2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics ....................................................... 5
Package outline ................................................... 10
Legal information .................................................11
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
All information provided in this document is subject to legal disclaimers.
4 October 2012
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
PSMN013-100BS
© NXP B.V. 2012. All rights reserved
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