SI8425DB-T1-E1 Vishay/Siliconix, SI8425DB-T1-E1 Datasheet - Page 5

• Manufacturer Part Number: SI8425DB-T1-E1
• Description: MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III
• Manufacturer: Vishay/Siliconix

Specifications of SI8425DB-T1-E1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: - 0.9 V
• Continuous Drain Current: - 9.3 A
• Resistance Drain-source Rds (on): 23 mOhms at 4.5 V
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: MICRO FOOT 1.6 x 1.6
• Fall Time: 200 ns
• Forward Transconductance Gfs (max / Min): 18 S
• Gate Charge Qg: 110 nC
• Power Dissipation: 2.7 W
• Rise Time: 50 ns
• Tradename: MICROFOOT TrenchFET
• Typical Turn-off Delay Time: 600 ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Note:
When Mounted on 1" x 1" FR4 with full Copper.
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63909
S12-2180-Rev. A, 10-Sep-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8
6
4
2
0
0
25
T
A
50
- Ambient Temperature (°C)
Current Derating*
D
is based on T
75
For technical questions, contact:
100
J(max.)
125
This document is subject to change without notice.
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
150
[e-mail]
1.5
1.2
0.9
0.6
0.3
0.0
25
50
T
A
- Ambient Temperature (°C)
Power Derating
75
100
Vishay Siliconix
www.vishay.com/doc?91000
125
Si8425DB
www.vishay.com
150
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