SI8425DB-T1-E1 Vishay/Siliconix, SI8425DB-T1-E1 Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
SI8425DB-T1-E1
Manufacturer Part Number
SI8425DB-T1-E1
Description
MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III
Manufacturer
Vishay/Siliconix
Datasheet
1.SI8425DB-T1-E1.pdf
(11 pages)
Specifications of SI8425DB-T1-E1
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
- 0.9 V
Continuous Drain Current
- 9.3 A
Resistance Drain-source Rds (on)
23 mOhms at 4.5 V
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
MICRO FOOT 1.6 x 1.6
Fall Time
200 ns
Forward Transconductance Gfs (max / Min)
18 S
Gate Charge Qg
110 nC
Power Dissipation
2.7 W
Rise Time
50 ns
Tradename
MICROFOOT TrenchFET
Typical Turn-off Delay Time
600 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Note:
When Mounted on 1" x 1" FR4 with full Copper.
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63909
S12-2180-Rev. A, 10-Sep-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8
6
4
2
0
0
25
T
A
50
- Ambient Temperature (°C)
Current Derating*
D
is based on T
75
For technical questions, contact:
100
J(max.)
125
This document is subject to change without notice.
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
150
pmostechsupport@vishay.com
1.5
1.2
0.9
0.6
0.3
0.0
25
50
T
A
- Ambient Temperature (°C)
Power Derating
75
100
Vishay Siliconix
www.vishay.com/doc?91000
125
Si8425DB
www.vishay.com
150
5