SI8425DB-T1-E1 Vishay/Siliconix, SI8425DB-T1-E1 Datasheet
SI8425DB-T1-E1
Specifications of SI8425DB-T1-E1
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SI8425DB-T1-E1 Summary of contents
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... Device Marking: 8425 xxx = Date/Lot Traceability Code Ordering Information: Si8425DB-T1-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation ...
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... Si8425DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient c, d Maximum Junction-to-Ambient Notes: a. Surface mounted on 1" x 1" FR4 board with full copper Maximum under steady state conditions is 85 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper ...
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... V C rss 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 On-Resistance vs. Junction Temperature pmostechsupport@vishay.com This document is subject to change without notice. Si8425DB Vishay Siliconix = 25 ° 125 ° ° 0.4 0.8 1.2 1.6 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss Drain-to-Source Voltage (V) ...
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... Si8425DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 = 150 ° 0.1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.7 0.6 0 250 μA D 0.4 0.3 0 100 T - Temperature (°C) J Threshold Voltage 100 10 0.1 0.01 www.vishay.com For technical questions, contact: 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1.5 1.2 0.9 0.6 0.3 0.0 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper pmostechsupport@vishay.com This document is subject to change without notice. Si8425DB Vishay Siliconix 50 75 100 125 150 T - Ambient Temperature (°C) A Power Derating www.vishay.com www.vishay.com/doc?91000 ...
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... Si8425DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper) www ...
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... Diamerter E a Millimeters Max. 0.600 0.290 0.310 0.410 1.600 1.600 0.850 0.380 pmostechsupport@vishay.com This document is subject to change without notice. Si8425DB Vishay Siliconix Silicon Bump Note Inches Min. Max. 0.0216 0.0236 0.0102 0.0114 0.0114 0.0122 0.0146 0.0161 ...
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... MICRO FOOT products include power MOSFETs, analog switches, and power ICs. For battery powered compact devices, this new packaging technology reduces board space requirements, improves thermal performance, and mitigates the parasitic effect typical of leaded packaged products. For example, the 6− ...
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AN824 Vishay Siliconix Main Parameters of Solder Bumps in MICRO FOOT Designs Á Á Á Á Á Á Á Á Á Á MICRO FOOT CSP Á Á Á Á Á Á Á Á Á Á Á Á Á Á Á ...
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Board pad design. The landing-pad size for MICRO FOOT products is determined by the bump pitch as shown in Table 3. The pad pattern is circular to ensure a symmetric, barrel-shaped solder bump. TABLE 3 Dimensions of Copper Pad and ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...