IXXK200N65B4 Ixys, IXXK200N65B4 Datasheet - Page 3

• Manufacturer Part Number: IXXK200N65B4
• Description: IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXK200N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.4 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 370 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 1150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-264-3
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

© 2013 IXYS CORPORATION, All Rights Reserved
300
250
200
150
100
300
250
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
50
0
0
0
0
7
8
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
0.5
9
Gate-to-Emitter Voltage
1
10
I
100A
V
1
C
200A
CE
V
V
= 300A
CE
GE
- Volts
- Volts
1.5
V
11
- Volts
V
GE
GE
= 15V
= 15V
13V
12V
11V
13V
12V
11V
1.5
12
2
J
J
13
= 150ºC
= 25ºC
2
2.5
T
J
= 25ºC
14
10V
9V
8V
7V
10V
9V
8V
7V
2.5
15
3
350
300
250
200
150
100
200
180
160
140
120
100
1.6
1.4
1.2
1.0
0.8
0.6
50
80
60
40
20
0
0
5.0
-50
0
V
GE
Fig. 2. Extended Output Characteristics @ T
V
= 15V
GE
11V
10V
1
5.5
-25
= 15V
2
6.0
0
Fig. 4. Dependence of V
9V
8V
7V
3
Fig. 6. Input Admittance
Junction Temperature
6.5
25
T
J
- Degrees Centigrade
4
V
CE
7.0
50
V
GE
- Volts
I
T
C
I
J
5
- Volts
= 300A
C
I
= - 40ºC
C
= 200A
7.5
75
= 100A
25ºC
IXXK200N65B4
IXXX200N65B4
6
CE(sat)
100
8.0
7
on
8.5
125
T
J
8
= 150ºC
J
= 25ºC
9.0
150
9
9.5
175
10