IXXK200N65B4 Ixys, IXXK200N65B4 Datasheet

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IXXK200N65B4

Manufacturer Part Number
IXXK200N65B4
Description
IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
Manufacturer
Ixys
Datasheet

Specifications of IXXK200N65B4

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
370 A
Gate-emitter Leakage Current
200 nA
Power Dissipation
1150 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-264-3
Continuous Collector Current Ic Max
200 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
XPT
GenX4
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2013 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
CM
CES
GES
sc
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
650V IGBTs
Clamped Inductive Load
T
T
Continuous
Transient
T
Leads Current Limit
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
TM
Test Conditions
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
GE
GE
CE
CE
G
= 25°C (Chip Capability)
= 25°C to 175°C
= 25°C to 175°C, R
= 110°C
= 25°C, 1ms
= 15V, V
= 10Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 160A, V
= 250μA, V
CES
, V
GE
CE
VJ
GE
= ±20V
GE
= 360V, T
= 150°C, R
= 0V
CE
GE
= 15V, Note 1
= 0V
= V
(PLUS247)
GE
GE
J
= 1MΩ
G
= 150°C
Preliminary Technical Information
= 1Ω
T
T
J
J
= 150°C
= 150°C
IXXK200N65B4
IXXX200N65B4
20..120 /4.5..27
Characteristic Values
650
Min.
4.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
CE
I
CM
1.13/10
= 400
Typ.
1000
1.6
1150
1.4
V
160
±20
±30
200
175
300
260
650
650
370
CES
10
10
6
Max.
±200
Nm/lb.in.
1.7
6.5
25
2
N/lb.
mA
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-264 (IXXK)
PLUS247 (IXXX)
G = Gate
C = Collector
Features
Advantages
Applications
C110
fi(typ)
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
International Standard Packages
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
E
G
= 650V
= 200A
= 80ns
C
≤ ≤ ≤ ≤ ≤ 1.7V
E
E
Tab = Collector
DS100518A(02/13)
Tab
= Emitter
Tab

Related parts for IXXK200N65B4

IXXK200N65B4 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 160A 15V, Note 1 CE(sat © 2013 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXXK200N65B4 IXXX200N65B4 Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 370 160 200 1000 = 1Ω 400 G CM ≤ ...

Page 2

... CES 253 62 76 4.40 245 80 2. 5.55 236 110 2.54 0.15 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXK200N65B4 IXXX200N65B4 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter ns 3. 0.13 °C/W °C/W ...

Page 3

... T = 25ºC 180 J 160 140 120 100 IXXK200N65B4 IXXX200N65B4 Fig. 2. Extended Output Characteristics @ 15V GE 11V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 300A ...

Page 4

... C oes 100 C res 100 Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Maximum Transient Thermal Impedance aaaa 0.001 0.01 Pulse Width - Seconds IXXK200N65B4 IXXX200N65B4 Fig. 8. Gate Charge V = 325V 200A 10mA G 50 100 150 200 250 300 350 ...

Page 5

... G GE 270 = 400V CE 265 140 260 255 120 250 100 245 240 80 235 230 100 IXXK200N65B4 IXXX200N65B4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off Ω ,    15V 400V 150º 25ºC ...

Page 6

... Ω  15V 400V 100 125 150 IXXK200N65B4 IXXX200N65B4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω  15V 400V Amperes C 64 ...

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