IXXK200N65B4 Ixys, IXXK200N65B4 Datasheet - Page 2

• Manufacturer Part Number: IXXK200N65B4
• Description: IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXK200N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.4 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 370 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 1150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-264-3
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
ie
oes
res
on
of
on
off
thJC
thCS
g
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
C
C
C
C
CE
CE
CE
= 200A, V
= 100A, V
= 100A, V
= 60A, V
PRELIMINARY TECHNICAL INFORMATION
= 25V, V
= 400V, R
= 400V, R
CE
GE
GE
GE
GE
= 10V, Note 1
G
G
= 15V, V
= 15V
= 15V
= 0V, f = 1MHz
= 1
= 1
4,835,592
4,881,106
J
J
Ω
Ω
= 25°C
= 150°C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
5,049,961
5,063,307
5,187,117
CES
Min.
54
5,237,481
5,381,025
5,486,715
Characteristic Values
11.25
6,162,665
6,259,123 B1
6,306,728 B1
4.40
2.20
5.55
2.54
0.15
Typ.
670
390
553
110
253
245
236
110
90
62
76
80
54
65
CE
(clamp), T
Max.
0.13 °C/W
3.50 mJ
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
mJ
mJ
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
Terminals: 1 - Gate
PLUS247
TO-264 Outline
Terminals:
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
2 - Collector
3 - Emitter
2,4 = Collector
TM
3 = Emitter
20.80
15.75
19.81
1 = Gate
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
IXXK200N65B4
IXXX200N65B4
Outline
Millimeter
5.45 BSC
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190