IKW50N65H5FKSA1 Infineon Technologies, IKW50N65H5FKSA1 Datasheet - Page 2

• Manufacturer Part Number: IKW50N65H5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKW50N65H5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKW50N65H5 SP001001734


KeyPerformanceandPackageParameters
Highspeed5IGBTinTRENCHSTOP
fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowQ
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
Type
IKW50N65H5
g
650V
V
CE
50A
I
C
V
Highspeedswitchingseriesfifthgeneration
CEsat
1.65V
,T
vj
=25°C
TM
2
5technologycopackedwithRAPID1
175°C
T
vjmax
K50H655
Marking
1
2
3
IKW50N65H5
Rev.1.1,2012-11-09
G
PG-TO247-3
Package
C
E