IKW50N65H5FKSA1 Infineon Technologies, IKW50N65H5FKSA1 Datasheet - Page 12

• Manufacturer Part Number: IKW50N65H5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKW50N65H5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKW50N65H5 SP001001734

Figure 17. Typicalcapacitanceasafunctionof
0.001
Figure 19. Diodetransientthermalimpedanceasa
1E+4
1000
0.01
100
0.1
10
1
1
1E-7
0
V
CE
collector-emittervoltage
(V
functionofpulsewidth
(D=t
1E-6
,COLLECTOR-EMITTERVOLTAGE[V]
C
C
C
GE
5
iss
oss
rss
=0V,f=1MHz)
p
/T)
1E-5
i:
r
i
[K/W]:
i
[s]:
t
p
,PULSEWIDTH[s]
10
1
0.4131024
1.4E-4
1E-4
15
2
0.4494995
1.3E-3
0.001
20
3
0.4867563
0.01007841
0.01
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Highspeedswitchingseriesfifthgeneration
25
4
0.1506418
0.09232929
0.1
30
1
12
Figure 18. IGBTtransientthermalresistance
Figure 20. Typicalreverserecoverytimeasafunction
0.001
0.01
130
120
110
100
0.1
90
80
70
60
50
40
30
1
1E-6
500 600 700 800 900 1000 1100 1200 1300 1400 1500
di
(D=t
ofdiodecurrentslope
(V
F
1E-5
R
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
p
/T)
t
1E-4
p
,PULSEWIDTH[s]
T
T
j
j
=25°C, I
=150°C, I
i:
r
i
[K/W]:
i
[s]:
0.001
F
1
0.1621884
8.6E-4
F
= 25A
= 25A
IKW50N65H5
0.01
Rev.1.1,2012-11-09
2
0.2278266
0.01112208
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
3
0.109985
0.09568113
1