STGIPS30C60 STMicroelectronics, STGIPS30C60 Datasheet - Page 6

• Manufacturer Part Number: STGIPS30C60
• Description: IGBT Transistors SLLIMM IPM 3-Phase 30A 600V IGBT
• Manufacturer: STMicroelectronics

Specifications of STGIPS30C60

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Continuous Collector Current At 25 C: 30 A
• Power Dissipation: 52 W
• Maximum Operating Temperature: + 150 C
• Package / Case: SDIP-25
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Tradename: SLLIMM

Electrical ratings
2.2
1. Simulated curves refer to typical IGBT parameters and maximum R
6/21
Figure 3. Maximum I
I
c(RMS)
(A)
32
30
28
26
24
22
20
18
16
14
12
4
Thermal data
Symbol
8
R
thJC
frequency
Tc = 100 °C
C(RMS)
12
Thermal resistance junction-case single IGBT
Thermal resistance junction-case single diode
current vs. switching
V
PF = 0.6, T
PN
Tc = 80 °C
(1)
= 300 V, Modulation Index = 0.8,
3-phase sinusoidal PWM
j
= 150 °C, f sine = 60 Hz
16
AM17110v1
DocID022471 Rev 3
f sw (kHz)
Parameter
Table 6. Thermal data
Figure 4. Maximum I
I
c(RMS)
(A)
thj-c.
20
18
16
14
12
10
8
1
V
PF = 0.6, T
PN
= 300 V, Modulation Index = 0.8,
3 - phase sinusoidal PWM
j
= 150 °C, T c = 100 °C
fsw = 12 kHz
10
C(RMS)
fsw = 20 kHz
Value
current vs. f
2.4
5
100
fsw = 16 kHz
STGIPS30C60
AM17111v1
sine
f sine (Hz)
°C/W
°C/W
Unit
(1)