NGTB20N120IHSWG ON Semiconductor, NGTB20N120IHSWG Datasheet - Page 6

• Manufacturer Part Number: NGTB20N120IHSWG
• Description: IGBT Transistors 1200/20A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
1
0.000001
0.000001
20%
10%
10%
20%
2%
1%
50% Duty Cycle
50% Duty Cycle
5%
Single Pulse
5%
2%
1%
Single Pulse
0.00001
0.00001
0.0001
0.0001
Figure 21. Test Circuit for Switching Characteristics
Figure 20. Diode Transient Thermal Impedance
Figure 19. IGBT Transient Thermal Impedance
0.001
TYPICAL CHARACTERISTICS
0.001
C
C
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Junction
i
Junction
i
= t
PULSE TIME (sec)
PULSE TIME (sec)
= t
i
i
/R
0.01
0.01
/R
i
i
6
R
C
R
C
1
1
1
1
R
C
R
C
0.1
0.1
2
2
2
2
Duty Factor = t
Peak T
Duty Factor = t
Peak T
J
= P
J
1
1
= P
DM
DM
1
x Z
/t
1
2
x Z
/t
R
C
R
C
qJC
2
n
n
n
n
qJC
+ T
10
10
Case
Case
+ T
C
R
R
qJA
C
qJA
= 0.8
= 2.0
R
R
0.25813
0.577
0.671
0.387
0.1057
0.03570
0.08061
0.140
0.190
0.237
0.114
i
i
(°C/W)
(°C/W)
100
100
1.48E−4
0.002
0.03
0.1
2.0
1.0E−4
1.76E−4
0.002
0.03
0.1
2.0
t
t
i
i
(sec)
(sec)
1000
1000