NGTB20N120IHSWG ON Semiconductor, NGTB20N120IHSWG Datasheet
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NGTB20N120IHSWG
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NGTB20N120IHSWG Summary of contents
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... SLD 1 http://onsemi.com 20 A, 1200 2.10 V CEsat E = 0.65 mJ off TO−247 C CASE 340L E STYLE 4 MARKING DIAGRAM 20N120IHS AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB20N120IHSWG TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB20N120IHS/D ...
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THERMAL CHARACTERISTICS Rating Thermal resistance junction−to−case, for IGBT Thermal resistance junction−to−case, for Diode Thermal resistance junction−to−ambient ELECTRICAL CHARACTERISTICS (T Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate− emitter short−circuited Gate ...
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T = 25°C J 140 120 100 COLLECTOR−EMITTER VOLTAGE (V) CE Figure 1. Output Characteristics 160 T = −40°C ...
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T = 25° 0.5 1.0 1.5 2.0 2 FORWARD VOLTAGE (V) F Figure 7. Diode Forward Characteristics 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 ...
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V = 600 0 150° Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. ...
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Duty Cycle 20% 10% 0. 0.001 Single Pulse 0.0001 0.000001 0.00001 0.0001 Figure 19. IGBT Transient Thermal Impedance 10 50% Duty Cycle 1 20% 10 0.01 Single Pulse 0.001 0.000001 0.00001 ...
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Figure 22. Definition of Turn On Waveform http://onsemi.com 7 ...
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Figure 23. Definition of Turn Off Waveform http://onsemi.com 8 ...
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