NGTB20N120IHSWG ON Semiconductor, NGTB20N120IHSWG Datasheet - Page 3

• Manufacturer Part Number: NGTB20N120IHSWG
• Description: IGBT Transistors 1200/20A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

160
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
0
0
4
3
2
1
0
−50
0
0
T
T
J
J
= −40°C
= 25°C
−20
V
V
1
1
CE
CE
Figure 1. Output Characteristics
Figure 3. Output Characteristics
T
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
J
, JUNCTION TEMPERATURE (°C)
2
2
Figure 5. V
10
V
GE
3
3
= 20 to 13 V
40
V
GE
CE(sat)
4
4
= 20 to 13 V
70
5
vs. T
5
100
TYPICAL CHARACTERISTICS
J
6
6
I
I
I
10 V
11 V
C
C
C
9 V
8 V
I
C
= 40 A
= 20 A
= 10 A
= 5 A
130
http://onsemi.com
7
7
11 V
10 V
9 V
8 V
7 V
7 V
160
8
8
3
10,000
1000
160
140
120
100
140
120
100
100
80
60
40
20
80
60
40
20
10
0
0
0
0
0
T
J
Figure 4. Typical Transfer Characteristics
= 150°C
20
V
V
1
CE
CE
Figure 2. Output Characteristics
V
40
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
GE
2
4
, GATE−EMITTER VOLTAGE (V)
60
3
80
100
8
4
T
J
120
= 25°C
V
5
GE
140
= 20 to 15 V
12
6
160 180
T
J
= 150°C
C
C
C
7
oes
res
ies
13 V
11 V
10 V
9 V
8 V
7 V
200
16
8