VS-GB200TS60NPBF Vishay, VS-GB200TS60NPBF Datasheet - Page 6

• Manufacturer Part Number: VS-GB200TS60NPBF
• Description: IGBT Modules 209 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB200TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 209 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 27-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.001
0.01
0.01
0.1
0.1
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED
1
1
1E-05
1E-05
Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
D = 0.2
D = 0.1
D = 0.02
D = 0.01
D = 0.2
D = 0.1
D = 0.01
D = 0.05
D = 0.5
D = 0.05
D = 0.02
D = 0.5
1E-04
1E-04
(Thermal Response)
(Thermal Response)
Single Pulse
Single Pulse
t
t
1
1
, Rectangular Pulse Duration (sec)
1E-03
, Rectangular Pulse Duration (sec)
1E-03
1E-02
6
1E-02
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
1E-01
www.vishay.com/doc?91000
1E-01
1E+00
Vishay Semiconductors
1E+01
GB200TS60NPbF
1E+00
[e-mail]
®
)
Document Number: 94503