VS-GB200TS60NPBF Vishay, VS-GB200TS60NPBF Datasheet - Page 5

• Manufacturer Part Number: VS-GB200TS60NPBF
• Description: IGBT Modules 209 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB200TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 209 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 27-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
T
J
100
100
100
90
80
70
60
50
40
30
20
90
80
70
60
50
= 125 °C, V
90
80
70
60
50
40
30
600
40
0
Fig. 13 - Typical Diode I
Fig. 12 - Typical Diode I
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Fig. 11 - Typical Diode I
700
T
10
J
CC
80
= 125 °C, I
800
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 360 V, I
T
dI
J
20
F
900 1000 1100 1200 1300
= 125 °C
/ dt (A/μs)
R
I
120
G
F
(A)
(Ω)
10 ohm
F
F
30
= 200 A
= 200 A, V
27 ohm
rr
160
rr
vs. dI
rr
47 ohm
vs. R
40
vs. I
F
F
GE
/dt
g
200
50
= 15 V
5
T
J
Fig. 14 - Typical Switching Losses vs. Gate Resistance
= 125 °C,R
L = 200 μH, R
100
10
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
12
11
10
1
9
8
7
6
5
4
3
2
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40
0
5
Fig. 15 - Typical Switching Losses vs.
Fig. 16 - Typical Switching Losses vs.
T
J
g1
10
= 125 °C, L = 200 μH, R
60
T
Collector to Emitter Current;
= 10 , R
J
25
V
- Junction Temperature (°C)
Junction Temperature;
15
80 100 120 140 160 180 200 220
CC
g
= 10 , V
Vishay Semiconductors
= 360 V, V
20
50
g2
R
25
GB200TS60NPbF
I
C
G
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Ic = 200A
= 0 , V
(A)
(Ω)
30
CC
Ic = 100A
75
GE
= 360 V, V
35
Ic = 50A
= 15 V
CC
Document Number: 94503
40
g
100
= 360 V, V
= 10 ,
45
GE
125
50
= 15 V
GE
= 15 V