VS-GB200TS60NPBF Vishay, VS-GB200TS60NPBF Datasheet - Page 4

• Manufacturer Part Number: VS-GB200TS60NPBF
• Description: IGBT Modules 209 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB200TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 209 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 27-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
8000
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40
20
0
0
0
0.0
Fig. 5 - Diode Forward Characteristics,
Fig. 6 - Maximum Collector Current vs.
50
T
0
J
Fig. 7 - Typical Energy Loss vs. I
= 125 °C, L = 200 μH, V
Maximum DC Collector Current (A)
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50
Tj = 125°C
R
0.5
g
Case Temperature
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 10 , V
100
t
100
p
= 500 μs
V
Eoff
I
F
C
1.0
(V)
(A)
GE
150
Tj = 25°C
150
= 15 V
Eon
DC
CC
1.5
200
= 360 V,
C
250
200
2.0
4
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10000
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100
1000
9000
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10
100
10
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40
0
T
5
T
Fig. 10 - Typical Switching Time vs. R
T
Fig. 8 - Typical Switching Time vs. I
J
J
J
Fig. 9 - Typical Energy Loss vs. R
td(off)
td(on)
60
= 125 °C, L = 200 μH, V
= 125 °C, L = 200 μH, V
= 125 °C, L = 200 μH, V
tf
tr
10
10
80 100 120 140 160 180 200 220
td(off)
I
I
15
R
CE
CE
tr
tf
g
= 200 A, V
= 200 A, V
Vishay Semiconductors
= 10 , V
20
20
Eoff
td(on)
R
I
R
25
GB200TS60NPbF
C
G
G
(A)
[e-mail]
(Ω)
(Ω)
30
Eon
GE
30
GE
GE
= 15 V
35
= 15 V
= 15 V
Document Number: 94503
CC
CC
CC
40
40
= 360 V,
= 360 V,
= 360 V,
45
50
50
g
C
g