VS-GB150TS60NPBF Vishay, VS-GB150TS60NPBF Datasheet - Page 4

• Manufacturer Part Number: VS-GB150TS60NPBF
• Description: IGBT Modules 138 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB150TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 138 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 27-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
Fig. 5 - Diode Forward Characteristics, t
4500
4000
3500
3000
2500
2000
1500
1000
160
140
120
100
200
150
100
500
50
80
60
40
20
0
0
0
Fig. 6 - Maximum Collector Current vs.
T
0.0
0
0
J
Fig. 7 - Typical Energy Loss vs. I
= 125 °C, L = 200 μH, V
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Maximum DC Collector Current (A)
Tj = 125°C
R
0.5
40
g
Case Temperature
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 10 , V
50
V
I
F
C
1.0
80
(V)
(A)
GE
= 15 V
Tj = 25°C
Eoff
100
Eon
CC
120
DC
1.5
= 360 V,
p
C
= 500 μs
160
150
2.0
4
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
1000
100
100
10
10
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0
Fig. 10 - Typical Switching Time vs. R
0
T
T
T
0
Fig. 8 - Typical Switching Time vs. I
J
J
J
Fig. 9 - Typical Energy Loss vs. R
= 125 °C, L = 200 μH, V
= 125 °C, L = 200 μH, V
= 125 °C, L = 200 μH, V
td(off)
10
10
td(off)
I
I
tf
R
CE
CE
40
td(on)
g
Eoff
tr
= 150 A, V
= 150 A, V
Vishay Semiconductors
= 10 , V
20
20
td(on)
R
R
GB150TS60NPbF
tf
G
I
G
C
[e-mail]
tr
80
(Ω)
(Ω)
(A)
GE
30
30
GE
GE
= 15 V
Eon
= 15 V
= 15 V
Document Number: 94502
120
CC
CC
CC
40
40
= 360 V,
= 360 V,
= 360 V,
50
g
160
50
C
g
,