VS-GB150TS60NPBF Vishay, VS-GB150TS60NPBF Datasheet - Page 3

• Manufacturer Part Number: VS-GB150TS60NPBF
• Description: IGBT Modules 138 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB150TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 138 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 27-Mar-13
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction and storage temperature range
Junction to case per leg
Case to sink per module
Mounting torque
Weight
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
200
150
100
200
150
100
50
50
Fig. 1 - Typical IGBT Output Characteristics
Fig. 2 - Typical IGBT Output Characteristics
0
0
0
0
Vge = 12V
Vge = 18V
Vge = 15V
Vge = 18V
Vge = 15V
Vge = 12V
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T
T
1
J
J
1
= 125 °C, t
= 25 °C, t
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2
case to heatsink
case to terminal 1, 2, 3
V
V
CE
CE
2
(V)
(V)
p
p
= 500 μs
3
= 500 μs
Vge = 9V
Vge = 9V
3
IGBT
Diode
4
5
4
SYMBOL
T
R
R
J
, T
thCS
thJC
Stg
3
MIN.
- 40
-
-
-
-
-
-
200
180
160
140
120
100
4.5
3.5
2.5
1.5
Fig. 4 - Typical Collector to Emitter Voltage vs.
80
60
40
20
0
4
3
2
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0
Fig. 3 - Typical Transfer Characteristics
0
V
1
GE
T
30
J
, Junction Temperature (°C)
V
= 15 V, 500 μs pulse width
Junction Temperature
2
CE
TYP.
0.17
0.19
185
0.1
Vishay Semiconductors
-
-
-
= 20 V, t
Tj = 125°C
3
60
V
GB150TS60NPbF
GE
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4
(V)
Ic = 200A
p
90
= 500 μs
5
Ic = 150A
Ic = 75A
Document Number: 94502
Tj = 25°C
6
120
MAX.
0.25
0.32
150
4
3
-
-
7
150
8
UNITS
°C/W
Nm
°C
g