VS-GB150TS60NPBF Vishay, VS-GB150TS60NPBF Datasheet - Page 2

• Manufacturer Part Number: VS-GB150TS60NPBF
• Description: IGBT Modules 138 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB150TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 138 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 27-Mar-13
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leakage current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
SYMBOL
V
RBSOA
SCSOA
V
V
BR(CES)
t
t
I
V
I
CE(on)
GE(th)
E
E
E
E
E
E
d(off)
CES
GES
d(on)
Q
Q
t
t
I
I
FM
t
t
tot
tot
on
off
on
off
rr
rr
rr
rr
r
f
rr
rr
J
J
= 25 °C unless otherwise specified)
= 25 °C unless otherwise specified)
V
V
V
V
V
V
V
V
I
I
I
I
V
I
R
I
R
T
R
T
R
I
V
I
V
C
C
C
C
C
C
F
F
GE
GE
GE
GE
GE
CE
GE
GE
GE
J
J
CC
CC
g
g
g
g
= 50 A, dI
= 50 A, dI
= 100 A
= 150 A
= 100 A, T
= 150 A, T
= 150 A, V
= 150 A, V
= 150 °C, I
= 150 °C, V
= 10  L = 200 μH, T
= 10  L = 200 μH, T
= 10 V
= 10 V
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= V
= 0 V, V
= 0 V, V
= ± 20 V
= 400 V, T
= 400 V, T
GE
TEST CONDITIONS
TEST CONDITIONS
, I
C
C
CE
CE
F
F
C
C
C
C
GE
GE
J
J
CC
CC
/dt = 200 A/μs,
/dt = 200 A/μs,
= 500 μA
= 500 μA
C
= 125 °C
= 125 °C
2
= 100 A
= 150 A
= 100 A, T
= 150 A, T
CC
J
J
= 600 V
= 600 V, T
= 300 A,
= 15 V to 0
= 15 V to 0
= 360 V, V
= 360 V, V
= 25 °C
= 125 °C
= 400 V, V
J
J
J
J
J
= 125 °C
= 125 °C
GE
= 25 °C
GE
= 125 °C
= 150 °C
P
= 15 V,
= 15 V,
= 600 V,
www.vishay.com/doc?91000
MIN.
MIN.
600
Vishay Semiconductors
10
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GB150TS60NPbF
[e-mail]
Fullsquare
TYP.
TYP.
1900
3600
2.64
2.68
3.25
0.01
1.39
1.52
1.31
1.49
2.42
6.62
390
100
402
226
290
2.2
4.2
7.5
2.0
3.9
5.9
4.2
80
17
25
-
-
-
Document Number: 94502
MAX.
± 200
MAX.
2600
5000
3.11
3.79
1.78
1.91
1.72
2.05
260
330
2.7
0.2
15
20
30
3
6
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
mA
mJ
nA
nC
nC
ns
ns
ns
V
V
A
A