SQM200N04-1M1L-GE3 Vishay/Siliconix, SQM200N04-1M1L-GE3 Datasheet
SQM200N04-1M1L-GE3
Specifications of SQM200N04-1M1L-GE3
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SQM200N04-1M1L-GE3 Summary of contents
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... Package with Low Thermal Resistance 0.0011 • 100 % R g 0.0013 • AEC-Q101 Qualified 200 • Material categorization: Single For definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET TO-263-7L SQM200N04-1m1L-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 °C C ...
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... GEN d(off 2 automostechsupport@vishay.com www.vishay.com/doc?91000 SQM200N04-1m1L Vishay Siliconix MIN. TYP. MAX 1.5 2.0 2 ± 100 = 125 ° 175 ° 500 J 5 V 200 ...
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... SQM200N04-1m1L Vishay Siliconix = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics = - 55 ° ° 125 ° ...
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... On-Resistance vs. Gate-to-Source Voltage 250 μ 125 150 175 - Drain Source Breakdown vs. Junction Temperature 4 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix 4 100 125 150 T - Junction Temperature (° 150 ° ° ...
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... V - Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area - Square Wave Pulse Duration (s) 5 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix 100 μ 100 ms 100 10 100 1000 Document Number: 62679 www.vishay.com/doc?91000 ...
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... S12-2164-Rev. A, 24-Sep-12 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Square Wave Pulse Duration (s) 6 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix - Document Number: 62679 www.vishay.com/doc?91000 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...