SQM200N04-1M1L VISHAY [Vishay Siliconix], SQM200N04-1M1L Datasheet
SQM200N04-1M1L
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SQM200N04-1M1L Summary of contents
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... ° 125 ° stg SYMBOL c PCB Mount R thJA R thJC 1 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix ® Power MOSFET and UIS Tested d LIMIT UNIT 40 V ± 20 200 200 200 A 600 100 500 mJ 375 W 125 - 175 °C ...
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... GEN d(off 2 automostechsupport@vishay.com www.vishay.com/doc?91000 SQM200N04-1m1L Vishay Siliconix MIN. TYP. MAX 1.5 2.0 2 ± 100 = 125 ° 175 ° 500 J 5 V 200 ...
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... SQM200N04-1m1L Vishay Siliconix = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics = - 55 ° ° 125 ° ...
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... On-Resistance vs. Gate-to-Source Voltage 250 μ 125 150 175 - Drain Source Breakdown vs. Junction Temperature 4 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix 4 100 125 150 T - Junction Temperature (° 150 ° ° ...
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... V - Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area - Square Wave Pulse Duration (s) 5 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix 100 μ 100 ms 100 10 100 1000 Document Number: 62679 www.vishay.com/doc?91000 ...
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... S12-2164-Rev. A, 24-Sep-12 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Square Wave Pulse Duration (s) 6 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix - Document Number: 62679 www.vishay.com/doc?91000 ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...