STGP35HF60W STMicroelectronics, STGP35HF60W Datasheet - Page 9

• Manufacturer Part Number: STGP35HF60W
• Description: IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
• Manufacturer: STMicroelectronics

Specifications of STGP35HF60W

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

STGP35HF60W
3
Figure 15. Test circuit for inductive load
Figure 17. Switching waveform
V
CE
V
G
I
C
Test circuits
switching
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tcross
Tr(Voff)
Tf
90%
10%
90%
10%
Doc ID 023894 Rev 1
AM01504v1
AM01506v1
90%
10%
Figure 16. Gate charge test circuit
Test circuits
AM01505v1
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