STGP35HF60W STMicroelectronics, STGP35HF60W Datasheet - Page 6
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STGP35HF60W
Manufacturer Part Number
STGP35HF60W
Description
IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
Manufacturer
STMicroelectronics
Datasheet
1.STGP35HF60W.pdf
(13 pages)
Specifications of STGP35HF60W
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
60 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Package / Case
TO-220
Continuous Collector Current Ic Max
35 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
V
(norm)
I
CE(sat)
C
150
100
(norm)
1.4
1.2
0.8
0.6
0.4
(A)
V
50
1.05
0.95
0
1
CES
0.9
0
0
1
-50
Electrical characteristics (curves)
Output characteristics
Normalized V
Normalized breakdown voltage vs.
temperature
T
J
V
2
= -50 °C
GE
20
0
= 15 V
T
4
J
V
= 25 °C
GE
50
I
C
CE(sat)
= 15 V
40
= 1 mA
11 V
6
T
V
J
100
GE
= 150 °C
vs. I
= 6 V
10 V
9 V
8 V
60
7 V
8
C
AM16253v1
AM16250v1
T
V
AM16251v1
J
Doc ID 023894 Rev 1
CE
(°C)
I
(V)
C
(A)
Figure 3.
Figure 5.
Figure 7.
V
(norm)
CE(sat)
(norm)
V
I
GE(th)
C
1.4
1.2
0.8
0.6
150
100
1.1
0.9
0.8
0.7
0.6
(A)
1
50
-50
0
1
-50
0
I
10 A
C
= 5 A
Transfer characteristics
Normalized gate threshold voltage
vs. temperature
Normalized V
0
3
0
V
CE
I
C
V
V
= 10 V
= 250 µA
GE
GE
50
6
= 15 V
CE(sat)
50
= V
CE
vs. temperature
100
STGP35HF60W
9
100
I
I
I
C
C
C
AM16249v1
AM16254v1
20 A
= 80 A
= 60 A
= 40 A
30 A
V
AM16252v1
GE
T
J
T
(V)
(°C)
J
(°C)