IRGP4650DPBF International Rectifier, IRGP4650DPBF Datasheet - Page 6

• Manufacturer Part Number: IRGP4650DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
• Manufacturer: International Rectifier

Specifications of IRGP4650DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 134 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 76 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

V
10000
CC
1000
400
350
300
250
200
150
100
100
26
24
22
20
18
16
14
10
= 400V; V
Fig. 23 - Typ. Capacitance vs. V
200
Fig. 19 - Typ. Diode I
10
Fig. 21 - Typ. Diode E
0
Cres
20
Coes
300
Cies
100
V
GE
GE
T
= 0V; f = 1MHz
= 15V; I
J
30
= 175°C
di F /dt (A/μs)
400
200
V CE (V)
I F (A)
40
F
= 35A; T
RR
500
300
R G = 10
R G = 100
RR
R G = 47
R G = 22
50
vs. di
vs. I
600
400
F
J
60
F
/dt
= 175°C
CE
700
500
70
2500
2250
2000
1750
1500
1250
1000
20
15
10
16
14
12
10
Fig. 24 - Typical Gate Charge vs. V
V
5
0
8
6
4
2
0
Fig. 22 - V
Fig. 20 - Typ. Diode Q
100 200 300 400 500 600 700 800 900
CC
8
0
100
= 400V; V
70A
V
10
I
CC
CE
10
Q G , Total Gate Charge (nC)
GE
= 400V; T
= 35A; L = 740μH
20
47
T sc
vs. Short Circuit Time
GE
di F /dt (A/μs)
12
V CES = 400V
V CES = 300V
V GE (V)
30
= 15V; T
22
C
40
= 25°C
RR
14
35A
vs. di
J
18A
50
= 175°C
I sc
16
10
F
/dt
60
GE
18
70
300
225
150
75
0