IRGP4650DPBF International Rectifier, IRGP4650DPBF Datasheet - Page 5

• Manufacturer Part Number: IRGP4650DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
• Manufacturer: International Rectifier

Specifications of IRGP4650DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 134 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 76 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

T
J
= 175°C; L = 210μH; V
T
J
= 175°C; L = 200μH; V
4000
3500
3000
2500
2000
1500
1000
3000
2500
2000
1500
1000
500
500
35
30
25
20
15
10
0
Fig. 15 - Typ. Energy Loss vs. R
10
0
0
Fig. 17 - Typ. Diode I
Fig. 13 - Typ. Energy Loss vs. I
R G = 47
R G = 100
R G = 22
10
20
R G = 10
25
T
20
J
30
CE
= 175°C
CE
= 400V, I
30
= 400V, R
Rg ()
I C (A)
I F (A)
50
40
E ON
40
E ON
RR
50
CE
G
vs. I
50
= 10; V
75
= 35A; V
E OFF
E OFF
F
60
C
60
G
GE
100
70
GE
70
= 15V
= 15V
T
J
T
= 175°C; L = 210μH; V
J
= 175°C; L = 200μH; V
1000
1000
100
100
10
10
26
24
22
20
18
16
14
Fig. 16 - Typ. Switching Time vs. R
Fig. 14 - Typ. Switching Time vs. I
Fig. 18 - Typ. Diode I
0
0
0
td ON
td ON
t F
td OFF
10
t R
t F
td OFF
10
20
t R
T
20
J
CE
CE
= 175°C
20
40
= 400V, R
= 400V, I
30
R G ()
R G ( 
I C (A)
40
RR
30
60
G
CE
vs. R
50
= 10; V
= 35A; V
40
80
G
60
C
G
GE
100
70
50
GE
= 15V
= 15V