IRGP4650DPBF International Rectifier, IRGP4650DPBF Datasheet - Page 2
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IRGP4650DPBF
Manufacturer Part Number
IRGP4650DPBF
Description
IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
Manufacturer
International Rectifier
Datasheet
1.IRGP4650DPBF.pdf
(12 pages)
Specifications of IRGP4650DPBF
Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
134 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247
Continuous Collector Current Ic Max
76 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGP4650DPBF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
Electrical Characteristics @ T
V
V
V
V
V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
(BR)CE S
G E (th)
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
CC
is measured at T
/ T J
= 80% (V
/ T
J
Collec tor-to-Em itter Bre a kd ow n Volta g e
T emperature Coeff. of B reakdow n Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
CES
), V
J
GE
of approximately 90°C.
= 20V, L = 19μH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 10.
(BR)CES
safely.
Min.
Min.
600
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
5
1022
1013
1942
2113
Typ.
Typ.
1.60
1.90
2.00
770
390
632
105
929
127
197
304
120
-18
1.3
1.0
2.0
1.4
25
69
18
29
46
33
44
43
35
61
65
25
—
—
—
—
Max.
Max.
1261
1.90
±100
104
508
753
117
6.5
3.0
70
27
44
56
42
54
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
mV/°C V
Units
Units
nC
μA
nA
μJ
ns
μJ
ns
pF
μs
μJ
ns
V
V
V
S
V
A
V
I
I
I
V
V
V
V
I
I
V
I
V
V
I
R
E nergy los s es include tail & diode revers e recovery
I
R
I
R
E nergy los s es include tail & diode revers e recovery
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 10, V
V
Rg = 10, V
T
V
V
C
C
C
F
F
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
J
GE
CC
J
CC
CC
J
CC
GE
G
G
G
G
= 35A
= 35A, T
= 35A, V
= 35A, V
= 35A, V
= 35A
= 35A, V
= 35A, V
= 35A, V
= 35A, V
=10, L=200μH, L
= 175°C
= 175°C, I
= 175°C
= 10, L = 200μH, L
= 10, L = 200μH, L
= 10, L = 200μH, L
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 400V
= 0V
= 30V
= 480V, Vp 600V
= 400V, Vp 600V
= 400V, I
= 15V, Rg = 10, L =210μH, L
Conditions
GE
GE
, I
, I
C
C
J
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
C
= 175°C
= 100μA
= 1mA (25°C-175°C)
GE
GE
C
= 1.0mA
= 1.0mA (25°C - 175°C)
F
= 15V, T
= 15V, T
= 15V, T
= 35A, PW = 60μs
= 400V, V
= 400V, V
= 400V, V
= 400V, V
= 600V
= 600V, T
= 140A
= 35A
= +20V to 0V
= +15V to 0V
Conditions
S
J
J
J
=150nH, T
GE
GE
GE
GE
= 25°C
= 150°C
= 175°C
S
S
S
J
= 150nH, T
= 150nH, T
= 150nH
= 175°C
=15V
= 15V
= 15V
= 15V
d
d
d
J
= 175°C
s
= 150nH
J
J
= 25°C
= 25°C