STPS20120CTN STMicroelectronics, STPS20120CTN Datasheet - Page 4

• Manufacturer Part Number: STPS20120CTN
• Description: Schottky Diodes & Rectifiers Pwr Schottky 2 x 100A 120V 0.54VF
• Manufacturer: STMicroelectronics

Specifications of STPS20120CTN

• Rohs: yes

Characteristics
Figure 9.
4/10
Figure 5.
Figure 7.
1.E+01
1.E+00
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-03
Z
TO-220AB, TO-220AB narrow leads, and I PAK
th(j-c)
Single pulse
0
I (mA)
R
10
/R
th(j-c)
Forward voltage drop versus forward current (per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
20
30
1.E-02
40
50
t (s)
V (V)
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
p
j
j
j
j
j
j
R
60
100
10
1
70
0.0
1.E-01
I
FM
2
80
(A)
0.2
90
=tp/T
(maximum values)
100
0.4
(typical values)
T =125°C
T
T =125°C
j
j
Doc ID 11212 Rev 3
110
tp
1.E+00
0.6
120
0.8
V
FM
Figure 6.
Figure 8.
(V)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
100
1.E-03
10
(maximum values)
Z
Single pulse
1
C(pF)
th(j-c)
1.2
T =25°C
j
/R
1.4
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Junction capacitance versus
reverse voltage applied (typical
values, per diode)
1.E-02
1.6
1.8
1.E-01
V (V)
t (s)
p
R
10
1.E+00
STPS20120C
=tp/T
V
OSC
F=1MHz
T =25°C
=30mV
j
T
RMS
tp
1.E+01
100