STPS20120CTN STMicroelectronics, STPS20120CTN Datasheet - Page 2

• Manufacturer Part Number: STPS20120CTN
• Description: Schottky Diodes & Rectifiers Pwr Schottky 2 x 100A 120V 0.54VF
• Manufacturer: STMicroelectronics

Specifications of STPS20120CTN

• Rohs: yes

Characteristics
1
Table 2.
1.
Table 3.
2/10
Symbol
I
V
F(RMS)
I
P
I
dPtot
---------------
F(AV)
T
FSM
ARM
RRM
dTj
T
stg
j
Symbol
R
R
th(j-c)
th(c)
------------------------- -
Rth j a
Repetitive peak reverse voltage
RMS forward current
Average forward current,
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
1
Characteristics
Absolute ratings (limiting values, per diode)
–
Thermal parameters
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode 1) x
condition to avoid thermal runaway for a diode on its own heatsink
Junction to case
Coupling
0.5
R
I
TO-220AB narrow leads
TO-220FPAB
I
TO-220AB narrow leads
TO-220FPAB
th(j-c)
2
2
TO-220AB, I
TO-220AB narrow
leads
TO-220FPAB
Parameter
PAK, TO-220AB,
PAK, TO-220AB
Doc ID 11212 Rev 3
Parameter
(per diode) + P(diode 2) x
(1)
2
PAK,
T
T
T
T
t
t
p
p
c
c
c
c
= 10 ms Sinusoidal
= 1 µs T
= 150 °C
= 145 °C
= 125 °C Per diode
= 100 °C
Per diode
Total
Per diode
Total
Total
j
= 25 °C
R
Per diode
Per device
Per device
th(c)
Value
-65 to + 175
1.8
5.5
4.5
0.6
3.5
3
Value
4600
120
150
175
30
10
20
10
20
STPS20120C
°C/W
Unit
Unit
W
°C
°C
V
A
A
A