MT47H32M8BP-37E:B TR Micron Technology Inc, MT47H32M8BP-37E:B TR Datasheet - Page 39
![IC DDR2 SDRAM 256MBIT 60FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT47H32M8BP-37E:B TR
Manufacturer Part Number
MT47H32M8BP-37E:B TR
Description
IC DDR2 SDRAM 256MBIT 60FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H16M16BG-3B_TR.pdf
(128 pages)
Specifications of MT47H32M8BP-37E:B TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
256M (32M x 8)
Speed
3.75ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
160mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1049-2
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Input Electrical Characteristics and Operating Conditions
Table 14: Input DC Logic Levels
All voltages are referenced to V
Table 15: Input AC Logic Levels
All voltages are referenced to V
Figure 11: Single-Ended Input Signal Levels
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Parameter
Input high (logic 1) voltage
Input low (logic 0) voltage
Parameter
Input high (logic 1) voltage (-37E/-5E)
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)
Input low (logic 0) voltage (-37E/-5E)
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)
Note:
Note:
Note:
1,150mV
1,025mV
936mV
918mV
900mV
882mV
864mV
775mV
650mV
1. V
1. Refer to AC Overshoot/Undershoot Specification (page 49).
1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.
SS
SS
DDQ
Input Electrical Characteristics and Operating Conditions
+ 300mV allowed provided 1.9V is not exceeded.
Symbol
V
V
IH(DC)
IL(DC)
39
Symbol
V
V
V
V
V
IH(AC)
IH(AC)
IL(AC)
IL(AC)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
REF(DC)
–300
Min
256Mb: x4, x8, x16 DDR2 SDRAM
+ 125
V
V
REF(DC)
REF(DC)
V
V
V
V
V
V
V
V
IH(AC)
IH(DC)
REF
REF
REF
REF
IL(DC)
IL(AC)
–300
–300
Min
+ AC noise
+ DC error
- DC error
- AC noise
+ 250
+ 200
V
REF(DC)
©2003 Micron Technology, Inc. All rights reserved.
V
Max
DDQ
V
V
REF(DC)
REF(DC)
- 125
1
V
V
Max
DDQ
DDQ
- 250
- 200
1
1
Units
mV
mV
Units
mV
mV
mV
mV
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