CY7C1512AV18-200BZXC Cypress Semiconductor Corp, CY7C1512AV18-200BZXC Datasheet - Page 20

• Manufacturer Part Number: CY7C1512AV18-200BZXC
• Description: IC SRAM 72MBIT 200MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512AV18-200BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.... –10°C to +85°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ........ –0.5V to V
DC Input Voltage
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document #: 001-06984 Rev. *C
V
V
V
V
V
V
V
V
I
I
V
I
15. Power up: Assumes a linear ramp from 0V to V
16. Output are impedance controlled. I
17. Output are impedance controlled. I
18. V
X
OZ
DD
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
DD
[11]
Operating Supply
DD
DDQ
.............................. –0.5V to V
Description
Relative to GND ........–0.5V to +2.9V
Relative to GND.......–0.5V to +V
DDQ
[12]
, whichever is larger, V
OH
OL
= (V
=
−
(V
DDQ
DDQ
[18]
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
DD
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
(min) within 200 ms. During this time V
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
I
f = f
OH
OL
OUT
DD
REF
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
= Max,
= 0 mA,
DDQ
(max) = 0.95V or 0.54V
DD
= 1/t
I
I
+ 0.5V
+ 0.5V
≤ V
≤ V
Test Conditions
CYC
DDQ
DDQ,
DD
Output Disabled
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch-up Current ................................................... > 200 mA
Operating Range
DDQ
Commercial
Industrial
250MHz
200MHz
167MHz
, whichever is smaller.
IH
Range
< V
DD
CY7C1510AV18, CY7C1525AV18
CY7C1512AV18, CY7C1514AV18
and V
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
DDQ
Temperature (T
V
V
–40°C to +85°C
< V
DDQ
DDQ
0°C to +70°C
V
V
DDQ
REF
DD
Ambient
–0.3
0.68
Min
V
.
1.7
1.4
/2 – 0.12
/2 – 0.12
−5
−5
SS
+ 0.1
– 0.2
A
0.75
Typ
)
1.8
1.5
1.8 ± 0.1V
V
V
V
DD
DDQ
DDQ
V
V
DDQ
REF
[15]
V
1230
1240
1350
1560
1005
1015
1280
1090
1105
Max
0.95
V
850
860
935
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 20 of 28
V
1.4V to
DDQ
V
DD
Unit
mA
mA
mA
[15]
μA
μA
V
V
V
V
V
V
V
V
V
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