CY7C1321CV18-167BZC Cypress Semiconductor Corp, CY7C1321CV18-167BZC Datasheet - Page 26

• Manufacturer Part Number: CY7C1321CV18-167BZC
• Description: IC SRAM 18MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1321CV18-167BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Notes
Document Number: 001-07161 Rev. *B
26. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
27. Outputs are disabled (High-Z) one clock cycle after a NOP.
28. In this example, if address A4 = A3, then data Q40 = D30, Q41 = D31, Q42 = D32, and Q43 = D43. Write data is forwarded immediately as read results. This note
R/W
CQ
CQ
LD
DQ
K
K
A
C
C
applies to the whole diagram.
t KHCH
NOP
1
t KH t KL
t SA t HA
t SC t HC
A0
READ
(burst of 4)
2
t KHCH
t CYC
t CQOH
3
t KHKH
t CLZ
t CQOH
A1
READ
(burst of 4)
t CCQO
4
Q00
t CCQO
t DOH
Figure 3. Read/Write/Deselect Sequence
Q01
Q02
5
Q03
t CO
Q10
NOP
6
t KH t KL
t CQDOH
Q11
t CQD
Q12
NOP
7
t CYC
Q13
A2
WRITE
(burst of 4)
8
t CHZ
t KHKH
t SD
t HD
CY7C1317CV18, CY7C1917CV18
CY7C1319CV18, CY7C1321CV18
D20
9
t CQH
[26, 27, 28]
D21
t SD
D22
t HD
A3
10
WRITE
(burst of 4)
D23
DON’T CARE
D30
t CQHCQH
11
D31
A4
D32
12
READ
(burst of 4)
D33
UNDEFINED
13
Page 26 of 31
Q40
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