CY7C036A-15AC Cypress Semiconductor Corp, CY7C036A-15AC Datasheet - Page 7

IC SRAM 288KBIT 15NS 100LQFP

CY7C036A-15AC

Manufacturer Part Number
CY7C036A-15AC
Description
IC SRAM 288KBIT 15NS 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C036A-15AC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
288K (16K x 18)
Speed
15ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1166

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C036A-15AC
Manufacturer:
CY
Quantity:
47
Part Number:
CY7C036A-15AC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Characteristics
Document #: 38-06046 Rev. *A
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Notes:
10. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
11. To access RAM, CE=L, UB=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire t
12. At any given temperature and voltage condition for any given device, t
13. Test conditions used are Load 3.
14. This parameter is guaranteed but not tested.
15. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform.
16. For 15 ns industrial parts t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
ABE
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
WDD
DDD
READ CYCLE
WRITE CYCLE
Parameter
[11]
[14]
[14]
[16]
[11]
[11]
[11]
[15]
I
[15]
OI
[12, 13, 14]
[12, 13, 14]
[12, 13, 14]
[12, 13, 14]
[13, 14]
[13, 14]
/I
OH
and 30-pF load capacitance.
Read Cycle Time
Address to Data Valid
Output Hold From Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable Access Time
Write Cycle Time
CE LOW to Write End
Address Valid to Write End
Address Hold From Write End
Address Set-Up to Write Start
Write Pulse Width
Data Set-Up to Write End
Data Hold From Write End
R/W LOW to High Z
R/W HIGH to Low Z
Write Pulse to Data Delay
Write Data Valid to Read Data Valid
HD
Min. is 0.5 ns.
Description
Over the Operating Range
[10]
HZCE
Min.
is less than t
12
12
10
10
10
10
3
3
3
0
0
0
0
3
-12
[1]
LZCE
Max.
12
12
10
10
12
12
10
25
20
8
and t
HZOE
Min.
15
15
12
12
12
10
CY7C026A
CY7C036A
is less than t
3
3
3
0
0
0
0
3
-15
Max.
LZOE
15
15
10
10
10
15
15
10
30
25
.
SCE
time.
Min.
20
20
15
15
15
15
3
3
3
0
0
0
0
3
-20
CY7C026A
CY7C036A
Max.
20
20
12
12
12
20
20
12
45
30
Page 7 of 18
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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